Diffusion of Sodium into Silicon Dioxide

by Nickolas Steinman

Submitted : Spring 2010

This paper addresses the problem of sodium contamination in silicon dioxide in the semiconductor industry and shows the calculations to determine the amount of contamination in a specific case. The goal of this project is to determine the diffusion coefficient of sodium into silicon dioxide as well as calculate the amount of sodium ions per cm² that penetrate the surface of the silicon dioxide solid over the experiments duration. This paper goes into detail to explain the mathematics and calculus applied to the problem to obtain an end result of 1.867x10¹¹ sodium atoms per cm².

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